PMDPB70XPE_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – 20 V dual P-channel Trench MOSFET

NXP Semiconductors
PMDPB70XPE
20 V dual P-channel Trench MOSFET
-5
V_GS
(V)
-4
aaa-003879
-3
-2
-1
0
0
2
4
6
Q_G (nC)
I_D = -2 A; V_DS = -10 V; T_amb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
-5
I_S
(A)
-4
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
017aaa137
Fig 15. Gate charge waveform definitions
aaa-003880
-3
-2
-1
T_j = 150 °C
T_j = 25 °C
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
V_DS (V)
V_GS = 0 V
Fig 16. Source current as a function of source-drain voltage; typical values
PMDPB70XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2012
© NXP B.V. 2012. All rights reserved.
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