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PMDPB70XPE_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – 20 V dual P-channel Trench MOSFET
NXP Semiconductors
PMDPB70XPE
20 V dual P-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics (per transistor)
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
IGSS
RDSon
gfs
drain leakage current
gate leakage current
drain-source on-state
resistance
forward
transconductance
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -2 A; Tj = 25 °C
VGS = -4.5 V; ID = -2 A; Tj = 150 °C
VGS = -2.5 V; ID = -1.5 A; Tj = 25 °C
VDS = -10 V; ID = -2 A; Tj = 25 °C
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
VDS = -10 V; ID = -2 A; VGS = -4.5 V;
Tj = 25 °C
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode (per transistor)
VDS = -10 V; ID = -2 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
VSD
source-drain voltage IS = -0.5 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-20 -
-
V
-0.75 -1
-1.25 V
-
-
-1
µA
-
-
-10 µA
-
-
10 µA
-
-
-10 µA
-
66
79
mΩ
-
94
112 mΩ
-
98
123 mΩ
-
7.3 -
S
-
5
7.5 nC
-
1.1 -
nC
-
1.1 -
nC
-
600 -
pF
-
103 -
pF
-
77
-
pF
-
7
-
ns
-
16 -
ns
-
33
-
ns
-
15 -
ns
-
-0.7 -1.2 V
PMDPB70XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2012
© NXP B.V. 2012. All rights reserved.
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