PMDPB70XPE_15 Datasheet, PDF (2/15 Pages) NXP Semiconductors – 20 V dual P-channel Trench MOSFET

NXP Semiconductors
PMDPB70XPE
20 V dual P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning information
Symbol Description
S1
source TR1
G1
gate TR1
D2
drain TR2
S2
source TR2
G2
gate TR2
D1
drain TR1
D1
drain TR1
D2
drain TR2
3. Ordering information
Simplified outline
654
Graphic symbol
D1
D2
7
8
G1
123
Transparent top view
DFN2020-6 (SOT1118)
G2
S1
S2
017aaa260
Table 3. Ordering information
Type number
Package
Name
PMDPB70XPE
DFN2020-6
Description
plastic thermal enhanced ultra thin small outline package;
no leads; 6 terminals
4. Marking
Version
SOT1118
Table 4. Marking codes
Type number
PMDPB70XPE
5. Limiting values
Marking code
2B
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
V_DS
drain-source voltage
T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
V_GS = -4.5 V; T_amb = 25 °C
[1]
V_GS = -4.5 V; T_amb = 100 °C
[1]
I_DM
peak drain current
T_amb = 25 °C; single pulse; t_p ≤ 10 µs
P_tot
total power dissipation
T_amb = 25 °C
[2]
[1]
T_sp = 25 °C
Source-drain diode
I_S
source current
T_amb = 25 °C
[1]
PMDPB70XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2012
Min Max Unit
-
-20 V
-12 12 V
-
-4.2 A
-
-3
A
-
-2.1 A
-
-12 A
-
515 mW
-
1210 mW
-
8330 mW
-
-1.3 A
© NXP B.V. 2012. All rights reserved.
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