PMDPB70XPE_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – 20 V dual P-channel Trench MOSFET

NXP Semiconductors
PMDPB70XPE
20 V dual P-channel Trench MOSFET
-12
I_D
(A)
-3.5 V
-4.5 V
-8.0 V
-8
-3.0 V
-4
aaa-003872
V_GS = -2.8 V
-2.5 V
-2.2 V
-1.8 V
−10^−3
I_D
(A)
−10^−4
−10^−5
017aaa129
(1)
(2)
(3)
0
0
-1
-2
-3
-4
V_DS (V)
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
−10^−6
0.0
−0.5
T_j = 25 °C; V_DS = -3 V
(1) minimum values
(2) typical values
(3) maximum values
−1.0
− 1.5
V_GS (V)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-003873
300
R_DSon
(mΩ)
-1.8 V
V_GS = -2.2 V -2.5 V
200
-2.8 V
300
R_DSon
(mΩ)
200
aaa-003874
-3.0 V
100
100
-3.5 V
-4.5 V
-8.0 V
T_j = 150 °C
T_j = 25 °C
0
0
-4
-8
-12
I_D (A)
T_j = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
0
0
-2
-4
-6
V_GS (V)
I_D = -2 A
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMDPB70XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2012
© NXP B.V. 2012. All rights reserved.
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