PMDPB70XPE_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – 20 V dual P-channel Trench MOSFET

NXP Semiconductors
-12
I_D
(A)
-8
aaa-003875
PMDPB70XPE
20 V dual P-channel Trench MOSFET
1.5
a
1.0
aaa-003876
-4
T_j = 150 °C
T_j = 25 °C
0
0
-1
V_DS > I_D × R_DSon
-2
-3
V_GS (V)
0.5
0.0
-60
0
60
120
180
T_j (°C)
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
-1.5
V_GS(th)
(V)
-1.0
-0.5
max
typ
min
aaa-003877
10³
C
(pF)
10²
aaa-003878
C_iss
C_oss
C_rss
0.0
-60
0
60
120
180
T_j (°C)
I_D = -0.25 mA; V_DS = V_GS
Fig 12. Gate-source threshold voltage as a function of
junction temperature
10
-10^-1
-1
-10
-10²
V_DS (V)
f = 1 MHz; V_GS = 0 V
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMDPB70XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2012
© NXP B.V. 2012. All rights reserved.
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