PMDPB70XPE_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – 20 V dual P-channel Trench MOSFET

NXP Semiconductors
PMDPB70XPE
20 V dual P-channel Trench MOSFET
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
ESD maximum rating
V_ESD
electrostatic discharge voltage
Per device
HBM; C = 100 pF; R = 1.5 kΩ
T_j
T_amb
T_stg
junction temperature
ambient temperature
storage temperature
Min Max Unit
[3]
-
2000 V
-55 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
120
P_der
(%)
80
017aaa123
120
I_der
(%)
80
017aaa124
40
40
0
−75
−25
25
75
125
175
T_j (°C)
0
−75
−25
25
75
125
175
T_j (°C)
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
PMDPB70XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2012
© NXP B.V. 2012. All rights reserved.
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