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| PMDPB70XPE_15 Datasheet, PDF (4/15 Pages) NXP Semiconductors – 20 V dual P-channel Trench MOSFET | |||
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NXP Semiconductors
PMDPB70XPE
20 V dual P-channel Trench MOSFET
-102
ID
(A)
-10
Limit RDSon = VDS/ID
aaa-003871
tp = 100 μs
-1
-10-1
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
tp = 1 ms
tp = 10 ms
tp = 100 ms
-10-2
-10-1
-1
-10
-102
VDS (V)
IDM = single pulse
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
Rth(j-sp)
thermal resistance
from junction to solder
point
Conditions
in free air
in free air; t ⤠5 s
Min Typ Max Unit
[1]
-
[2]
-
[2]
-
-
212 244 K/W
90
104 K/W
55
64
K/W
11
15
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMDPB70XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 20 June 2012
© NXP B.V. 2012. All rights reserved.
4 of 15
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