BUK762R0-40C_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK762R0-40C
N-channel TrenchMOS standard level FET
3.5
R_DSon
(mΩ)
3
2.5
2
1.5
003aab082
2
a
1.5
1
0.5
03aa27
1
5
10
T _j = 25 °C; I_D = 25 A
15 _{VGS (V)} 20
0
-60
0
60
a=
R _{DS o n}
R _{DS o n(25°C )}
120 _{Tj (°C)} 180
Fig 12. Drain-source on-state resistance as a function
of gate-source voltage; typical values
10
V_GS
(V)
8
003aab011
V_DD = 14 V
V_DD = 32 V
6
4
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
14000
C
(pF)
10500
C_iss
C_oss
003aab009
7000
C_rss
3500
2
0
0
50
100
T _j = 25 °C; I_D = 25 A
150
200
Q_G (nC)
0
10^−2
10^−1
1
V_GS = 0 V ; f = 1 M H z
10
10²
V_DS (V)
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK762R0-40C_2
Product data sheet
Rev. 02 — 20 August 2007
© NXP B.V. 2007. All rights reserved.
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