BUK762R0-40C_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK762R0-40C
N-channel TrenchMOS standard level FET
Table 4. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Source-drain diode
I_S
source current
I_SM
peak source current
T_mb = 25 °C
T_mb = 25 °C
t_p ≤ 10 μs; duty type pulsed; T_mb = 25 °C
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
[3] Refer to document 9397 750 12572 for further information.
[4] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
[5] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[6] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[7] Refer to application note AN10273 for further information.
Min
[1] _-
[2][3] _-
-
Max
Unit
276
A
100
A
1104
A
300
I_D
(A)
200
003aab004
120
P_der
(%)
80
03aa16
100
40
(1)
0
0
50
100
150
200
T_mb (°C)
V_GS • 10 V
(1) Capped at 100 A due to package.
Fig 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
P_der =
P_tot
P _{t o t (25°C )}
× 100 %
150
200
T_mb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK762R0-40C_2
Product data sheet
Rev. 02 — 20 August 2007
© NXP B.V. 2007. All rights reserved.
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