BUK762R0-40C_15 Datasheet, PDF (5/15 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK762R0-40C
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
R_th(j-a)
thermal resistance mounted on a printed-circuit
-
50
-
K/W
from junction to
board; minimum footprint; vertical
ambient
in still air
R_th(j-mb)
thermal resistance
from junction to
mounting base
see Figure 5
-
-
0.45
K/W
1
Z_th(j-mb)
(K/W) δ = 0.5
10^−1
10^−2
0.2
0.1
0.05
0.02
single shot
10^−3
10^−6
10^−5
10^−4
10^−3
10^−2
003aab020
P
t_p
δ=
T
t_p
t
T
10^−1
1
t_p (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Static characteristics
V_(BR)DSS
drain-source
I_D = 0.25 mA; V_GS = 0 V;
40
breakdown voltage T_j = 25 °C
I_D = 0.25 mA; V_GS = 0 V;
36
T_j = -55 °C
V_GSth
gate-source threshold I_D = 1 mA; V_DS = V_GS; T_j = 25 °C;
2
voltage
see Figure 10
I_D = 1 mA; V_DS = V_GS;
-
T_j = -55 °C; see Figure 11
I_D = 1 mA; V_DS = V_GS;
1
T_j = 175 °C; see Figure 11
I_DSS
drain leakage current V_DS = 40 V; V_GS = 0 V; T_j = 25 °C
-
V_DS = 40 V; V_GS = 0 V;
-
T_j = 175 °C
BUK762R0-40C_2
Product data sheet
Rev. 02 — 20 August 2007
Typ
-
-
3
-
-
0.02
-
Max
Unit
-
V
-
V
4
V
4.4
V
-
V
1
μA
500
μA
© NXP B.V. 2007. All rights reserved.
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