BUK762R0-40C_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK762R0-40C
N-channel TrenchMOS standard level FET
Rev. 02 — 20 August 2007
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in
Automotive critical applications.
1.2 Features
„ 175 °C rated
„ Q101 compliant
„ Low on-state resistance
„ Standard level compatible
1.3 Applications
„ 12 V loads
„ General purpose power switching
„ Automotive systems
„ Motors, lamps, solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1 and 4
[1][2] _-
-
100 A
P_tot
total power dissipation T_mb = 25 °C; see Figure 2
Static characteristics
-
-
333 W
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 13 and
12
-
1.7 2 mΩ
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source avalanche
energy
I_D = 100 A; V_sup ≤ 40 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; inductive load
type unclamped inductive load
-
-
1.2 J
[1] Continuous current is limited by package.
[2] Refer to document 9397 750 12572 for further information.