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BUK762R0-40C_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK762R0-40C
N-channel TrenchMOS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Min
IGSS
RDSon
gate leakage current VDS = 0 V; VGS = 20 V; Tj = 25 °C
-
VDS = 0 V; VGS = -20 V;
-
Tj = 25 °C
drain-source on-state VGS = 10 V; ID = 25 A;
-
resistance
Tj = 175 °C; see Figure 12 and
13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
-
see Figure 13 and 12
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
-
see Figure 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/μs;
-
VGS = -10 V; VDS = 30 V;
Tj = 25 °C
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/μs;
-
VGS = -10 V; VDS = 30 V;
Tj = 25 °C
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 32 V;
-
VGS = 10 V; Tj = 25 °C;
see Figure 14
QGS
gate-source charge ID = 25 A; VDS = 32 V;
-
VGS = 10 V; Tj = 25 °C;
see Figure 14
QGD
gate-drain charge
ID = 25 A; VDS = 32 V;
-
VGS = 10 V; Tj = 25 °C;
see Figure 14
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
-
f = 1 MHz; Tj = 25 °C;
see Figure 15
Coss
output capacitance VGS = 0 V; VDS = 25 V;
-
f = 1 MHz; Tj = 25 °C;
see Figure 15
Crss
reverse transfer
VGS = 0 V; VDS = 25 V;
-
capacitance
f = 1 MHz; Tj = 25 °C;
see Figure 15
td(on)
turn-on delay time
VDS = 30 V; RL = 1.2 Ω;
-
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
tr
rise time
VDS = 30 V; RL = 1.2 Ω;
-
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
td(off)
turn-off delay time
VDS = 30 V; RL = 1.2 Ω;
-
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
Typ
Max
Unit
2
100
nA
2
100
nA
-
3.75
mΩ
1.7
2
mΩ
0.85
1.2
V
75
-
ns
57
-
nC
175
-
nC
38
-
nC
67
-
nC
8492
11323
pF
1606
1927
pF
1101
1508
pF
65
-
ns
133
-
ns
146
-
ns
BUK762R0-40C_2
Product data sheet
Rev. 02 — 20 August 2007
© NXP B.V. 2007. All rights reserved.
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