 English |
|
|
|
|
|
|
|
| BUK762R0-40C_15 Datasheet, PDF (4/15 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
| |||
| ◁ |
NXP Semiconductors
BUK762R0-40C
N-channel TrenchMOS standard level FET
103
003aab013
IAL
(A)
102
(1)
(2)
10
(3)
1
10-3
10-2
10-1
1
10
tAL (ms)
(1) SingleÃpulse; Tmb = 25 °C.
(2) SingleÃpulse; Tmb = 150 °C.
(3) Repetitive.
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
104
ID
(A)
103
limit RDSon = VDS/ID
003aab028
δ = 10 μs
102
(1)
100 μs
DC
10
1 ms
1
10 ms
100 ms
10â1
10â1
1
Tmb = 25 °C; IDM is single pulse
(1) Capped at 100 A due to package.
10
102
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK762R0-40C_2
Product data sheet
Rev. 02 â 20 August 2007
© NXP B.V. 2007. All rights reserved.
4 of 15
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese