BUK725R0-40C_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK725R0-40C
N-channel TrenchMOS standard level FET
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60
I_S
(A)
40
20
T_j = 175 °C
0
0.0
0.5
T_j = 25 °C
1.0 V_SD (V) 1.5
10
V_GS
(V)
8
6
4
2
0
0
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V_DS = 32 V
20
40
60 _{QG (nC)} 80
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
Fig 15. Gate-source voltage as a function of gate
charge; typical values
5000
C
(pF) _Ciss
4000
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3000 ^Coss
2000
C_rss
1000
0
10^-1
1
10 _{VDS (V)} 10²
Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK725R0-40C_1
Product data sheet
Rev. 01 — 23 March 2009
© NXP B.V. 2009. All rights reserved.
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