BUK725R0-40C_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK725R0-40C
N-channel TrenchMOS standard level FET
Rev. 01 — 23 March 2009
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Avalanche robust
„ Suitable for standard level gate drive
„ Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
„ 12V Motor, lamp and solenoid loads
„ High performance automotive power
systems
„ High performance Pulse Width
Modulation (PWM) applications
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage
I_D
drain current
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 10 V; T_mb = 25 °C; see Figure 1;
see Figure 3;
-
-
40 V
[1] -
-
75 A
P_tot
total power dissipation
Avalanche ruggedness
T_mb = 25 °C; see Figure 2
-
-
157 W
E_DS(AL)S non-repetitive drain-source I_D = 75 A; V_sup ≤ 40 V; R_GS = 50 Ω; V_GS = 10 V;
avalanche energy
T_j(init) = 25 °C; unclamped
Dynamic characteristics
-
-
240 mJ
Q_GD
gate-drain charge
V_GS = 10 V; I_D = 25 A; V_DS = 32 V; T_j = 25 °C;
see Figure 15
-
27 -
nC
Static characteristics
R_DSon drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
see Figure 12; see Figure 13
-
4.1 5
mΩ
[1] Current is limited by package.