BUK725R0-40C_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK725R0-40C
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 1;
see Figure 3;
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; t_p ≤ 10 µs; pulsed; see Figure 3
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C;
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
E_DS(AL)S
non-repetitive
I_D = 75 A; V_sup ≤ 40 V; R_GS = 50 Ω; V_GS = 10 V;
drain-source avalanche T_j(init) = 25 °C; unclamped
energy
E_DS(AL)R
repetitive drain-source see Figure 4
avalanche energy
Min
-
-
-20
[1] -
[1] -
-
-
-55
-55
[2] -
-
-
[3][4] -
[5]
[1] Current is limited by package.
[2] Continuous current is limited by package.
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[5] Refer to application note AN10273 for further information.
Max
40
40
20
75
75
490
157
175
175
75
490
240
-
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
J
BUK725R0-40C_1
Product data sheet
Rev. 01 — 23 March 2009
© NXP B.V. 2009. All rights reserved.
3 of 13