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| BUK725R0-40C_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK725R0-40C
N-channel TrenchMOS standard level FET
102
IAL
(A)
10
1
003aac068
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1 tAL (ms) 10
Fig 4. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 5
junction to mounting
base
thermal resistance from vertical in still air; mounted on a printed
junction to ambient
circuit board; minimum foot-print
Min Typ Max Unit
-
0.65 0.95 K/W
-
70
-
K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
003aac067
10-2
single shot
P
δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
10-1
tp (s)
t
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK725R0-40C_1
Product data sheet
Rev. 01 â 23 March 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
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