BUK725R0-40C_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK725R0-40C
N-channel TrenchMOS standard level FET
140
I_D
(A)
120
100
80
60
40
20
0
0
(1)
50
003aac066
100
150
200
T_mb (°C)
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10³
I_D
Limit R_DSon = V_DS / I_D
(A)
10²
10
1
10^-1
10^-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac305
10 μs
100 μs
DC
100 ms
10 ms
1 ms
10
V_DS (V)
10²
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK725R0-40C_1
Product data sheet
Rev. 01 — 23 March 2009
© NXP B.V. 2009. All rights reserved.
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