BUK725R0-40C_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK725R0-40C
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
2
03aa27
16
003aac250
5.5
7
a
R_DSon ⁵
V_GS (V) = 6
(mΩ)
1.5
12
8
1
0.5
0
-60
0
60
120 _{Tj (°C)} 180
8
10
20
4
0
100
200
300 _{ID (A)} 400
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
BUK725R0-40C_1
Product data sheet
Rev. 01 — 23 March 2009
© NXP B.V. 2009. All rights reserved.
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