BUK725R0-40C_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK725R0-40C
N-channel TrenchMOS standard level FET
50
I_D
(A)
40
30
20
10
0
0
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T_j = 175 °C
2
T_j = 25 °C
4 V_GS (V) 6
300
I_D
(A)
200
20 ¹⁰ ₈
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V_GS (V) = 7.5
7
6.5
6
100
5.5
5
4.5
0
0
2
4
6
8
10
V_DS (V)
Fig 6. Transfer characteristics: drain current as a
Fig 7. Output characteristics: drain current as a
function of gate-source voltage; typical values
function of drain-source voltage; typical values
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100
30
g_fs
(S)
R_DSon
80
(mΩ)
20
60
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40
10
20
0
0
20
40 I_D (A) 60
0
5
10
15 _{VGS (V)} 20
Fig 8. Forward transconductance as a function of
drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK725R0-40C_1
Product data sheet
Rev. 01 — 23 March 2009
© NXP B.V. 2009. All rights reserved.
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