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| BUJ103A_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – Silicon diffused power transistor | |||
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NXP Semiconductors
8. Package outline
BUJ103A
Silicon diffused power transistor
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
p
A1
q
mounting
D1
base
D
L1(1)
b1(2)
L
(3Ã)
b2(2)
(2Ã)
L2(1)
1
2
3
ee
b(3Ã)
Q
c
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
b b1(2) b2(2) c
D D1 E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7 1.40 0.9
4.1 1.25 0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
SOT78
3-lead TO-220AB
SC-46
ISSUE DATE
08-04-23
08-06-13
Fig 16. Package outline SOT78 (TO-220AB)
BUJ103A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 â 8 November 2011
© NXP B.V. 2011. All rights reserved.
9 of 13
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