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BUJ103A_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – Silicon diffused power transistor
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NXP Semiconductors
BUJ103A
Silicon diffused power transistor
5. Thermal characteristics
Table 4.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see Figure 2
in free air
Min Typ Max Unit
-
-
1.56 K/W
-
60
-
K/W
001aab998
10
Zth(j-mb)
(K/W)
1 δ = 0.5
10−1
0.2
0.1
0.05
0.02
0.01
Ptot
tp
δ=
T
10−2
10−5
10−4
10−3
10−2
10−1
tp
t
T
1
10
tp (s)
Fig 2. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUJ103A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
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