BUJ103A_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – Silicon diffused power transistor

NXP Semiconductors
BUJ103A
Silicon diffused power transistor
I_Bon
V_BB
V_CC
L_C
L_B
DUT
001aab991
Fig 7.
V_CC = 300 V; V_BB = 5 V; L_C = 200 H; L_B = 1 H.
Test circuit for inductive load switching
10²
T_j = 25 °C
001aab994
h_FE
V_CE = 5 V
10
1V
1
10^−2
10^−1
1
10
I_C (A)
Fig 9. DC current gain as a function of collector
current; typical values
I_C
I_Con
90 %
10 %
t
t_f
t_s
I_B
t_off
I_Bon
t
−I_Boff
001aab992
Fig 8. Switching times waveforms for inductive load
2.0
V_CEsat
(V)
I_C = 1 A 2 A 3 A 4 A
1.6
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1.2
0.8
0.4
0
10^−2
10^−1
1
10
I_B (A)
T_j = 25 C.
Fig 10. Collector-emitter saturation voltage as a
function of base current; typical values
BUJ103A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
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