BUJ103A_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – Silicon diffused power transistor

NXP Semiconductors
BUJ103A
Silicon diffused power transistor
1.4
V_BEsat
(V)
1.2
1.0
001aab996
V_CEsat
(V) 0.5
0.4
001aab997
0.8
0.3
0.6
0.2
0.4
0.1
0.2
0
10^−1
1
10
I_C (A)
I_C/I_B = 4.
Fig 11. Base-emitter saturation voltage as a function
of collector current; typical values
0
10^−1
1
10
I_C (A)
I_C/I_B = 4.
Fig 12. Collector-emitter saturation voltage as a
function of collector current; typical values
I_Bon
V_BB
V_CC
L_C
V_CL(CE)
probe point
L_B
DUT
001aab999
10
I_C
(A)
8
6
4
2
001aac000
V_CEclamp  1000 V; V_CC = 150 V; V_BB = 5 V; L_B = 1 H;
L_C = 200 H.
Fig 13. Test circuit for reverse bias safe operating
area
0
0
200
400
600
800
1000
V_CEclamp (V)
T_j  T_j(max).
Fig 14. Reverse bias safe operating area
BUJ103A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
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