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| BUJ103A_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – Silicon diffused power transistor | |||
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NXP Semiconductors
BUJ103A
Silicon diffused power transistor
6V
30 Hz to 60 Hz
300 Ω
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
vertical
1Ω
001aab987
Fig 3. Test circuit for collector-emitter sustaining
voltage
VIM
0
tp
T
VCC
RL
RB
DUT
001aab989
Fig 5.
VIM = ï6 V to +8 V; VCC = 250 V; tp = 20 ïs;
ï¤ = tp/T = 0.01.
RB and RL calculated from ICon and IBon requirements.
Test circuit for resistive load switching
IC
(mA)
250
100
10
0
min VCE (V)
VCEOsus
001aab988
Fig 4. Oscilloscope display for collector-emitter
sustaining voltage test waveform
IC
90 %
ICon
90 %
IB
ton
ts
toff
IBon
10 %
t
tf
10 %
tr ⤠30 ns
âIBoff
t
001aab990
Fig 6. Switching times waveforms for resistive load
BUJ103A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 â 8 November 2011
© NXP B.V. 2011. All rights reserved.
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