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| BUJ103A_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – Silicon diffused power transistor | |||
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NXP Semiconductors
BUJ103A
Silicon diffused power transistor
6. Characteristics
Table 5. Characteristics
Tmb = 25 ï°C; unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
ICES
ICBO
ICEO
collector-emitter cut-off
current
collector-base cut-off current
collector-emitter cut-off
current
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax; Tj = 125 ï°C
VBE = 0 V; VCE = VCESMmax
VCEO = VCEOMmax = 400 V
IEBO
VCEOsus
emitter-base cut-off current
collector-emitter sustaining
voltage
VEB = 7 V; IC = 0 A
IB = 0 A; IC = 10 mA; L = 25 mH;
see Figure 3 and 4
VCEsat
collector-emitter saturation
voltage
IC = 3.0 A; IB = 0.6 A; see Figure 10
VBEsat
base-emitter saturation
voltage
IC = 3.0 A; IB = 0.6 A; see Figure 11
hFE
DC current gain
hFEsat
DC saturation current gain
Dynamic characteristics
IC = 1 mA; VCE = 5 V; see Figure 9
IC = 500 mA; VCE = 5 V
IC = 2.0 A; VCE = 5 V
IC = 3.0 A; VCE = 5 V
Switching times (resistive load); see Figure 5 and 6
ton
turn-on time
tstg
storage time
ICon = 2.5 A; IBon = ïIBoff = 0.5 A;
RL = 75 ï
tf
fall time
Switching times (inductive load); see Figure 7 and 8
tstg
storage time
tf
fall time
ICon = 2 A; IBon = 0.4 A; LB = 1 ïH;
VBB = ï5 V
Switching times (inductive load); see Figure 7 and 8
tstg
storage time
tf
fall time
ICon = 2 A; IBon = 0.4 A; LB = 1 ïH;
VBB = ï5 V; Tj = 100 ï°C
[1] Measured with half sine-wave voltage (curve tracer).
Min Typ Max Unit
[1] -
-
1
mA
[1] -
-
2
mA
[1] -
-
1
mA
[1] -
-
0.1 mA
-
-
400 -
0.1 mA
-
V
-
0.25 1
V
-
0.97 1.5 V
10 17 32
13 22 32
11 16 22
-
12.5 -
-
0.52 0.6 ïs
-
2.7 3.3 ïs
-
0.3 0.35 ïs
-
1.2 1.4 ïs
-
30 60 ns
-
-
1.8 ïs
-
-
120 ns
BUJ103A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 â 8 November 2011
© NXP B.V. 2011. All rights reserved.
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