PSMNR90-30BL_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK

NXP Semiconductors
PSMNR90-30BL
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
3
VGS (th)
(V)
2
1
max
typ
m in
003a a c982
10
R_{DSon 2.6}
(mΩ)
8
6
4
2
003aag668
2.8 V_GS (V) = 3
4.5 _3.5
0
-6 0
0
60
120
180
Tj (°C)
0
10
0
100
200 I_D (A) 300
Fig. 11. Gate-source threshold voltage as a function of Fig. 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
003a a f767
2
a
1 .5
1
0 .5
0
-6 0
0
60
120
180
Tj ( C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 14. Gate charge waveform definitions
PSMNR90-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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