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| PSMNR90-30BL_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK | |||
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NXP Semiconductors
PSMNR90-30BL
N-channel 30 V 1.0 m⦠logic level MOSFET in D2PAK
104
ID
(A)
103
102
10
1
Limit R DS on = VDS / ID
003a a f773
tp =10 ms
100 ms
1 ms
DC
10 ms
100 ms
10-1
10-1
1
10
102
V DS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 4
minimum footprint; mounted on a
printed-circuit board
Min Typ Max Unit
-
0.22 0.49 K/W
-
50
-
K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
10-2
0.02
003aaf772
P
δ=
tp
T
single shot
tp
t
10-3
T
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMNR90-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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