PSMNR90-30BL_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK

PSMNR90-30BL
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
2 April 2014
Product data sheet
1. General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
• High efficiency due to low switching and conduction losses
• Suitable for logic level gate drive sources
3. Applications
• DC-to-DC converters
• Load switiching
• Motor control
• Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; Fig. 2
P_tot
total power dissipation T_mb = 25 °C; Fig. 1
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
resistance
Fig. 12
V_GS = 10 V; I_D = 25 A; T_j = 100 °C;
Fig. 13; Fig. 12
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 4.5 V; I_D = 75 A; V_DS = 15 V;
Fig. 14; Fig. 15
Min Typ Max Unit
-
-
30
V
[1]
-
-
120 A
-
-
306 W
-55 -
175 °C
-
0.89 1
mΩ
-
1.19 1.5 mΩ
-
37
-
nC
-
118 -
nC
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