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| PSMNR90-30BL_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK | |||
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NXP Semiconductors
PSMNR90-30BL
N-channel 30 V 1.0 m⦠logic level MOSFET in D2PAK
Symbol
VGS
Ptot
ID
Parameter
gate-source voltage
total power dissipation
drain current
IDM
peak drain current
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 2
[1]
VGS = 10 V; Tmb = 25 °C; Fig. 2
[1]
pulsed; tp ⤠10 µs; Tmb = 25 °C; Fig. 3
Tmb = 25 °C
[1]
pulsed; tp ⤠10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ⤠30 V; RGS = 50 Ω; unclamped
[1] Continuous current is limited by package.
120
Pder
(%)
80
03aa16
500
ID
(A)
400
300
Min Max Unit
-20 20
V
-
306 W
-
120 A
-
120 A
-
1573 A
-55 175 °C
-55 175 °C
-
260 °C
-
120 A
-
1573 A
-
1.9 J
003a a f774
200
40
(1)
100
0
0
50
100
150
200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0
50
100
150
200
Tmb ( C)
Fig. 2. Continuous drain current as a function of
mounting base temperature.
PSMNR90-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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