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PSMNR90-30BL_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
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NXP Semiconductors
PSMNR90-30BL
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11
IDSS
drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13; Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13; Fig. 12
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
total gate charge
ID = 75 A; VDS = 15 V; VGS = 10 V;
Fig. 14; Fig. 15
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 75 A; VDS = 15 V; VGS = 4.5 V;
QGS
gate-source charge
Fig. 14; Fig. 15
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
QGD
gate-drain charge
VGS(pl)
gate-source plateau
voltage
ID = 75 A; VDS = 15 V; Fig. 14; Fig. 15
PSMNR90-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 April 2014
Min Typ Max Unit
30
-
-
V
27
-
-
V
1.3 1.7 2.2 V
0.65 -
-
V
-
-
2.5 V
-
0.02 10
µA
-
-
500 µA
-
10
100 nA
-
10
100 nA
-
0.89 1
mΩ
-
1.1 1.4 mΩ
-
1.65 2
mΩ
-
1.19 1.5 mΩ
-
1.1 -
Ω
-
243 -
nC
-
222 -
nC
-
118 -
nC
-
39
-
nC
-
22
-
nC
-
17
-
nC
-
37
-
nC
-
2.8 -
V
© NXP Semiconductors N.V. 2014. All rights reserved
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