PSMNR90-30BL_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK

NXP Semiconductors
PSMNR90-30BL
N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK
5
R_DSon
(mΩ)
4
003aaf764
75
I_D
(A)
60
003aaf763
3
45
2
30
1
15
T_j = 175 °C
T_j = 25 °C
0
0
4
8
12 _VGS(V) 16
0
0
0.6
1.2
1.8
2.4 _VGS(V)3
Fig. 7. Drain-source on-state resistance as a function Fig. 8. Transfer characteristics: drain current as a
of gate-source voltage; typical values
function of gate-source voltage; typical values
300
I_D
10
(A)
4.5
250
3.5
003aad011
10^-1
3
I_D
(A)
10^-2
003aab271
200
2.8
150
100
2.6
50
V_GS (V) = 2.4
0
0
2
4
6
8
10
V_DS (V)
min
typ
max
10^-3
10^-4
10^-5
10^-6
0
1
2 V_GS (V) 3
Fig. 9. Output characteristics: drain current as a
Fig. 10. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
PSMNR90-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
2 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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