PSMN7R8-100PSE_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package

NXP Semiconductors
PSMN7R8-100PSE
N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in
TO220 package
20
R_DSon
5V
16
5.5 V
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6V
3
a
2.4
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12
6.5 V
8
7 V 8 V 10 V
4
0
20
40
60
80 100 120
I_D (A)
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
1.8
1.2
0.6
0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 14. Gate charge waveform definitions
10
V_GS
(V)
8
6
4
V_GS = 20 V
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80 V
50 V
2
0
0
25
50
75 100 125 150
Q_G (nC)
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
PSMN7R8-100PSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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