PSMN7R8-100PSE_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package

NXP Semiconductors
PSMN7R8-100PSE
N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in
TO220 package
Symbol
Parameter
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
V_GS = 10 V; T_j(init) = 25 °C; I_D = 100 A;
V_sup ≤ 100 V; R_GS = 50 Ω; unclamped;
Fig. 4
Min Typ Max Unit
-
-
315 mJ
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
mb
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
D
G
mbb076 S
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN7R8-100PSE TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
PSMN7R8-100PSE
Marking code
PSMN7R8-100PSE
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j ≥ 25 °C; T_j ≤ 175 °C
PSMN7R8-100PSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2014
Min Max Unit
-
100 V
© NXP Semiconductors N.V. 2014. All rights reserved
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