PSMN7R8-100PSE_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package

NXP Semiconductors
10³
I_D
(A)
Limit R_DSon = V_DS / I_D
10²
DC
10
1
PSMN7R8-100PSE
N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in
TO220 package
aaa-012596
t_p = 10 us
100 us
1 ms
10 ms
100 ms
10^-1
1
10
10²
10³
V_DS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10³
I_AL
(A)
10²
aaa-012595
(1)
10
(2)
1
10^-3
10^-2
10^-1
1
10
t_AL (ms)
Fig. 4. Single pulse avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
Minimum footprint; mounted on a
printed circuit board
PSMN7R8-100PSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2014
Min Typ Max Unit
-
0.42 0.51 K/W
-
50
-
K/W
© NXP Semiconductors N.V. 2014. All rights reserved
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