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PSMN7R8-100PSE_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package
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NXP Semiconductors
PSMN7R8-100PSE
N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in
TO220 package
Symbol
Parameter
Conditions
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
ID = 0 A; VDS = 0 V; VGS = 10 V
QGS
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
QGD
gate-drain charge
Fig. 14; Fig. 15
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 16
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
trr
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 50 V
Min Typ Max Unit
-
128 -
nC
-
110 -
nC
-
33
-
nC
-
41
-
nC
-
5.3 -
V
-
7110 -
pF
-
450 -
pF
-
310 -
pF
-
31
-
ns
-
48
-
ns
-
82
-
ns
-
47
-
ns
-
0.8 1.2 V
-
69
-
ns
-
210 -
nC
120
ID
(A)
96
7V
8V
10 V
72
6.5 V
003aak748
6V
5.5 V
20
RDSon
16
12
003aak749
48
8
5V
24
4.5 V
4V
0
0
0.5
1
1.5
2
VDS (V)
4
0
0
4
8
12
16
20
VGS (V)
Fig. 6. Output characteristics; drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN7R8-100PSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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