PSMN7R8-100PSE_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package

NXP Semiconductors
PSMN7R8-100PSE
N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in
TO220 package
80
g_fs
(S)
60
003aak750
200
I_D
(A)
160
003aak751
120
40
80
20
40
175°C
T_j = 25°C
0
0
16
32
48
64
80
I_D (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
0
012345678
V_GS (V)
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
10^{- 1}
I_D
(A)
10^{- 2}
10^{- 3}
10^{- 4}
10^{- 5}
03aa35
min typ max
5
V_GS(th)
(V)
4
3
2
1
003aad280
max
typ
min
10^{- 6}
0
2
4
6
V_GS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
- 60
0
60
120
180
T_j (°C)
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
PSMN7R8-100PSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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