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| PSMN7R8-100PSE_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package | |||
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NXP Semiconductors
PSMN7R8-100PSE
N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in
TO220 package
Symbol
VDGR
VGS
Ptot
ID
Parameter
drain-gate voltage
gate-source voltage
total power dissipation
drain current
IDM
peak drain current
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kΩ
Tmb = 25 °C; Fig. 1
VGS = 10 V; Tj = 25 °C; Fig. 2
[1]
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ⤠10 µs; Tmb = 25 °C; Fig. 3
Tmb = 25 °C
[1]
pulsed; tp ⤠10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ⤠100 V; RGS = 50 Ω; unclamped;
Fig. 4
Min Max Unit
-
100 V
-20 20
V
-
294 W
-
100 A
-
83
A
-
473 A
-55 175 °C
-55 175 °C
-
260 °C
-
100 A
-
473 A
-
315 mJ
120
Pder
(%)
[1] Continuous current limited by package
03aa16
150
ID
(A)
125
aaa-012594
80
100
(1)
75
40
50
25
0
0
50
100
150
200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 25 50 75 100 125 150 175 200
Tmb (°C)
(1) Capped at 100A due to package
Fig. 2. Continuous drain current as a function of
mounting base temperature
PSMN7R8-100PSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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