PSMN7R8-100PSE_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package

PSMN7R8-100PSE
N-channel 100 V 7.8 mΩ standard level MOSFET with
improved SOA in TO220 package
11 August 2014
Product data sheet
1. General description
Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of
NXP's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstand
substantial in-rush and fault condition currents during turn on/off, whilst offering a low
RDS(on) characteristic to keep temperatures down and efficiency up in continued use.
Ideal for telecommunication systems based on 48 V backplanes / supply rails.
2. Features and benefits
• Enhanced safe operating area (SOA) for superior protection during linear mode
operation
• Low RDS(on) for low conduction losses
3. Applications
• Electronic fuse
• Hot-swap / Soft-start
• Uninterruptible power supplies
• Motor control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 100 °C; V_GS = 10 V; Fig. 2
P_tot
total power dissipation T_mb = 25 °C; Fig. 1
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
resistance
Fig. 12
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 25 A; V_DS = 50 V;
Fig. 14; Fig. 15
Min Typ Max Unit
-
-
100 V
-
-
83
A
-
-
294 W
-
6.7 7.8 mΩ
-
41
-
nC
-
128 -
nC
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