PSMN3R3-80ES Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
12
R_{DSon VGS (V) =}
4.5
(mΩ)
10
8
6
4
2
0
0
20
40
003aag798
5.0
6.0
10.0
60
80
I_D (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
V_GS
(V)
7.5
40V 64V
V_DS= 16V
003aaf609
10⁵
C
(pF)
10⁴
003aaf610
C_iss
5
10³
C_oss
C_rss
2.5
10²
0
0
40
80
120 _{QG (nC)160}
10
10^-1
1
10 _VDS(V) 10²
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN3R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 October 2011
© NXP B.V. 2011. All rights reserved.
8 of 14