PSMN3R3-80ES Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
80
I_D
(A)
60
10.06.0 5.0
40
003aag796
V_GS (V) =
4.5
20
0
0
0.2
0.4
0.6
0.8
1
V_DS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
Fig 9. Output characteristics; drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of drain-source voltage; typical values
junction temperature
10^−1
03aa35
3
I_D
a
(A)
10^−2
min typ max
2.4
003aaf608
10^−3
1.8
10^−4
1.2
10^−5
0.6
10^−6
0
2
4
6
V_GS (V)
0
-6 0
0
60
120
180
Tj (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normailzed drain-source on-state resistance
factor as a function of junction temperature
PSMN3R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 October 2011
© NXP B.V. 2011. All rights reserved.
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