PSMN3R3-80ES Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see Figure 4
Vertical in free air
Min Typ Max Unit
-
0.22 0.44 K/W
-
60
-
K/W
1
Z_th(j-mb)
(K/W)
10^{-1 δ = 0.5}
0.2
0.1
0.05
10^-2
0.02
003aaf613
P
tp
δ=
T
single shot
tp
t
10^-3
T
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
t_{p (s)}
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN3R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 October 2011
© NXP B.V. 2011. All rights reserved.
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