PSMN3R3-80ES Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK

PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
Rev. 1 — 31 October 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
1.3 Applications
 DC-to-DC converters
 Load switch
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state
resistance
Dynamic characteristics
Q_GD
gate-drain charge
Q_G(tot)
total gate charge
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
Conditions
Min Typ Max Unit
T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
80 V
T_mb = 25 °C; V_GS = 10 V; see Figure 1 ^[1] -
-
120 A
T_mb = 25 °C; see Figure 2
-
-
338 W
-55 -
175 °C
V_GS = 10 V; I_D = 25 A; T_j = 100 °C;
see Figure 12
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
see Figure 13
-
[2] _-
4.6 5.4 mΩ
2.8 3.3 mΩ
V_GS = 10 V; I_D = 75 A; V_DS = 40 V;
see Figure 14; see Figure 15
-
27
-
nC
-
139 -
nC
V_GS = 10 V; T_j(init) = 25 °C; I_D = 120 A;
-
-
676 mJ
V_sup ≤ 80 V; R_GS = 50 Ω; unclamped