PSMN3R3-80ES Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
[1] Measured 3 mm from package.
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 25 A; dI_S/dt = 100 A/µs;
V_GS = 0 V; V_DS = 20 V
Min Typ Max Unit
-
0.8 1.2 V
-
63
-
ns
-
121 -
nC
250
g_fs
(S)
200
150
003aaf602
75
I_D
(A)
50
003aaf603
100
25
50
T_j = 175 °C
T_j = 25 °C
0
0
20
40
60
80
I_D (A)
0
0
2
4 _VGS(V) 6
Fig 5. Forward transconductance as a function of
drain current; typical values
8
R_DSon
(mΩ)
6
003aag797
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
16000
C
(pF)
12000
003aaf606
C_iss
4
8000
C_rss
2
4000
0
0
4
8
12
16
20
V_GS (V)
0
10^-1
1
10 _VGS(V) 10²
Fig 7. Drain-source on-state resistance as a function Fig 8. Input and reverse transfer capacitances as a
of gate-source voltage; typical values
function of gate-source voltage; typical values
PSMN3R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 October 2011
© NXP B.V. 2011. All rights reserved.
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