PSMN3R3-80ES Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
240
I_D
(A)
200
160
120
80
40
0
0
003aag824
(1)
50
100
150
200
T_mb (°C)
120
P_der
(%)
80
03aa16
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS / I_D
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aag823
t_p =10 μ s
100 μs
10
DC
1 ms
1
10 ms
100 ms
10^-1
0.1
1
10
100
1000
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN3R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 October 2011
© NXP B.V. 2011. All rights reserved.
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