PSMN2R8-40PS_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – PSMN2R8-40PS_15

NXP Semiconductors
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
10^{- 1}
003aak869
2
I_D
(A)
a
10^{- 2}
min
typ max
1.5
10^{- 3}
1
10^{- 4}
0.5
10^{- 5}
03aa27
10^{- 6}
0
2
4
6
V_GS (V)
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
0
- 60
0
60
120 _{Tj (°C)} 180
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
R_DSon
(mΩ)
8
V_GS (V) = 5
003aad432
V_DS
I_D
5.5
6
4
6.5
6
2
8 10
20
0
0
20
40
60
80 _{ID (A)} 100
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 14. Gate charge waveform definitions
Fig. 13. Drain-source on-state resistance as a function
of drain current; typical values
PSMN2R8-40PS
Product data sheet
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11 February 2013
© NXP B.V. 2013. All rights reserved
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