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PSMN2R8-40PS_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – PSMN2R8-40PS_15
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NXP Semiconductors
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
Symbol
Parameter
Conditions
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 20 V; RL = 0.8 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 17
trr
reverse recovery time IS = 40 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V
Qr
recovered charge
IS = 40 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C
Min Typ Max Unit
-
464 -
pF
-
28
-
ns
-
29
-
ns
-
52
-
ns
-
23
-
ns
-
0.85 1.2 V
-
47
-
ns
-
61
-
nC
[1] Measured 3 mm from package.
120
ID
(A)
20
100 10
8
80
6.5
6
60
40
20
003aad431
5.5
5
VGS (V) = 4.5
100
ID
(A)
80
60
40
20
003aad433
Tj = 175 °C
Tj = 25 °C
0
0
0.3
0.6
0.9
1.2
VDS (V)
0
0
2
4
VGS (V) 6
Fig. 5. Output characteristics: drain current as a
Fig. 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
PSMN2R8-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 February 2013
© NXP B.V. 2013. All rights reserved
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