PSMN2R8-40PS_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – PSMN2R8-40PS_15

NXP Semiconductors
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j ≥ 25 °C; T_j ≤ 175 °C
V_DGR
drain-gate voltage
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS
gate-source voltage
I_D
drain current
V_GS = 10 V; T_mb = 100 °C; Fig. 1
[1]
V_GS = 10 V; T_mb = 25 °C; Fig. 1
[1]
I_DM
peak drain current
pulsed; t_p ≤ 10 µs; T_mb = 25 °C; Fig. 3
P_tot
total power dissipation
T_mb = 25 °C; Fig. 2
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source current
T_mb = 25 °C
I_SM
peak source current
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C; I_D = 100 A;
V_sup ≤ 40 V; unclamped; R_GS = 50 Ω
[1] Continuous current rating is limited by package.
200
I_D
(A)
150
(1)
100
003aad361
120
P_der
(%)
80
40
50
Min Max Unit
-
40
V
-
40
V
-20 20
V
-
100 A
-
100 A
-
797 A
-
211 W
-55 175 °C
-55 175 °C
-
100 A
-
797 A
-
407 mJ
03aa16
0
0
50
100
150
200
T_mb (°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
T_mb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN2R8-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 February 2013
© NXP B.V. 2013. All rights reserved
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