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| PSMN2R8-40PS_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – PSMN2R8-40PS_15 | |||
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NXP Semiconductors
PSMN2R8-40PS
N-channel TO220 40 V 2.8 m⦠standard level MOSFET
103
ID
(A)
Limit RDSon = VDS / ID
102
(1)
10
DC
1
003aad385
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
10-1
10-1
1
10
VDS (V)
102
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 4
Min Typ Max Unit
-
0.4 0.7 K/W
1
Zth (j-mb)
(K/W)
10-1
10-2
δ = 0.5
0.2
0.1
0.05
0.02
003aad247
10-3
single shot
P
δ=
tp
T
10-4
10-6
10-5
10-4
10-3
10-2
10-1
tp
t
T
1
10
tp (s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN2R8-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 February 2013
© NXP B.V. 2013. All rights reserved
4 / 13
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