PSMN2R8-40PS_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – PSMN2R8-40PS_15

NXP Semiconductors
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
Symbol
Parameter
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
V_GS = 10 V; T_j(init) = 25 °C; I_D = 100 A;
V_sup ≤ 40 V; unclamped; R_GS = 50 Ω
[1] Continuous current rating is limited by package.
[2] Measured 3 mm from package.
Min Typ Max Unit
-
-
407 mJ
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
mb
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
D
G
mbb076 S
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN2R8-40PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
PSMN2R8-40PS
Marking code
PSMN2R8-40PS
PSMN2R8-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 February 2013
© NXP B.V. 2013. All rights reserved
2 / 13